Cmos Transistor Jonction

Structured Analog CMOS Design describes a structured analog design approach that makes it possible to simplify complex analog design problems and develop a design strategy that can be used for the design of large number of analog cells. It intentionally avoids treating the analog design as a mathematical problem, developing a design procedure based on the understanding of device physics and approximations that give insight into parameter interdependences.

Multi-Threshold CMOS Digital Circuits Managing Leakage Power discusses the Multi-threshold voltage CMOS (MTCMOS) technology, that has emerged as an increasingly popular technique to control the escalating leakage power, while maintaining high performance. The book addresses the leakage problem in a number of designs for combinational, sequential, dynamic, and current-steering logic. Moreover, computer-aided design methodologies for designing low-leakage integrated circuits are presented.

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.

Low-Voltage CMOS Log Companding Analog Design presents in detail state-of-the-art analog circuit techniques for the very low-voltage and low-power design of systems-on-chip in CMOS technologies. The proposed strategy is mainly based on two bases: the Instantaneous Log Companding Theory, and the MOSFET operating in the subthreshold region. The former allows inner compression of the voltage dynamic-range for very low-voltage operation, while the latter is compatible with CMOS technologies and suitable for low-power circuits. The required background on the specific modeling of the MOS transistor for Companding is supplied at the beginning.

CMOS Memory Circuits is a systematic and comprehensive reference work designed to aid in the understanding of CMOS memory circuits, architectures, and design techniques.
CMOS technology is the dominant fabrication method and almost the exclusive choice for semiconductor memory designers.
Both the quantity and the variety of complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS memories are traded as mass-products worldwide and are diversified to satisfy nearly all practical requirements in operational speed, power, size, and environmental tolerance. Without the outstanding speed, power, and packing density characteristics of CMOS memories, neither personal computing, nor space exploration, nor superior defense systems, nor many other feats of human ingenuity could be accomplished. Electronic systems need continuous improvements in speed performance, power consumption, packing density, size, weight, and costs. These needs continue to spur the rapid advancement of CMOS memory processing and circuit technologies.

During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte­ grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi­ dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation.