Breakdown Phenomena in Semiconductors and Semiconductor Devices by Michael Levinshtein, Juha Kostamovaara, Sergey Vainshtein
English | 2005-09-30 | ISBN: 9812563954 | 224 pages | PDF | 9,1 MB
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions.