Near Infrared Detectors Based on Silicon Supersaturated with Transition Metals by Daniel Montero ÁlvarezEnglish | PDF | 2021 | 262 Pages | ISBN : 3030638251 | 12.7 MB
This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations.