Theory of Semiconductor Quantum Devices

The emerging field of semiconductor quantum optics combines semiconductor physics and quantum optics, with the aim of developing quantum devices with unprecedented performance. In this book researchers and graduate students alike will reach a new level of understanding to begin conducting state-of-the-art investigations.

A thorough examination of the present and future of semiconductor device technology
Engineers continue to develop new electronic semiconductor devices that are almost exponentially smaller, faster, and more efficient than their immediate predecessors. Theory of Modern Electronic Semiconductor Devices endeavors to provide an up-to-date, extended discussion of the most important emerging devices and trends in semiconductor technology, setting the pace for the next generation of the discipline's literature.
Kevin Brennan and April Brown focus on three increasingly important areas: telecommunications, quantum structures, and challenges and alternatives to CMOS technology. Specifically, the text examines the behavior of heterostructure devices for communications systems, quantum phenomena that appear in miniaturized structures and new nanoelectronic device types that exploit these effects, the challenges faced by continued miniaturization of CMOS devices, and futuristic alternatives. Device structures on the commercial and research levels analyzed in detail include:
* Heterostructure field effect transistors
* Bipolar and CMOS transistors
* Resonant tunneling diodes
* Real space transfer transistors
* Quantum dot cellular automata
* Single electron transistors
The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.

This thesis sheds light on the unique dynamics of optoelectronic devices based on semiconductor quantum-dots. The complex scattering processes involved in filling the optically active quantum-dot states and the presence of charge-carrier nonequilibrium conditions are identified as sources for the distinct dynamical behavior of quantum-dot based devices. Comprehensive theoretical models, which allow for an accurate description of such devices, are presented and applied to recent experimental observations. The low sensitivity of quantum-dot lasers to optical perturbations is directly attributed to their unique charge-carrier dynamics and amplitude-phase-coupling, which is found not to be accurately described by conventional approaches. The potential of quantum-dot semiconductor optical amplifiers for novel applications such as simultaneous multi-state amplification, ultra-wide wavelength conversion, and coherent pulse shaping is investigated. The scattering mechanisms and the unique electronic structure of semiconductor quantum-dots are found to make such devices prime candidates for the implementation of next-generation optoelectronic applications, which could significantly simplify optical telecommunication networks and open up novel high-speed data transmission schemes.