Interaction of Hydrogen Isotopes With Transition Metals And Intermetallic Compounds

This book provides an overview of the history as well as the physical, structural, optical, and chemical properties of post-transition elements. It also discusses methods for the detection and separation of these metals, including special methods for determining their presence in industrial and organometallic products. The information contained herein is useful for physicists, researchers, chemists, materials engineers, and students.

The revised second edition of this established text offers readers a significantly expanded introduction to the effects of radiation on metals and alloys. It describes the various processes that occur when energetic particles strike a solid, inducing changes to the physical and mechanical properties of the material. Specifically it covers particle interaction with the metals and alloys used in nuclear reactor cores and hence subject to intense radiation fields. It describes the basics of particle-atom interaction for a range of particle types, the amount and spatial extent of the resulting radiation damage, the physical effects of irradiation and the changes in mechanical behavior of irradiated metals and alloys.

The definitive standard reference on the topic - now in its second, expanded edition with 20% more content and new chapters about ionic liquids, high pressure chemistry, the use of microwave technology and many more.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations.

This thesis makes a significant contribution to the development of cheaper Si-based Infrared detectors, operating at room temperature. In particular, the work is focused in the integration of the Ti supersaturated Si material into a CMOS Image Sensor route, the technology of choice for imaging nowadays due to its low-cost and high resolution. First, the material is fabricated using ion implantation of Ti atoms at high concentrations.