Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling By Souvik Mahapatra 2016 | 286 Pages | ISBN: 8132225074 | PDF | 21 MB
The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices Springer | Condensed Matter Physics | April 25, 2016 | ISBN-10: 366249681X | 59 pages | pdf | 3.8 mb
Authors: Li, Zhiqiang Nominated as an Excellent Doctoral Dissertation by Peking University in 2014 Proposes innovative methods for addressing the challenges in the source/drain engineering of germanium nMOSFETs Experimentally demonstrates the methods’ effectiveness with regard to reducing parasitic resistance in the source/drain of germanium nMOSFETs
Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling By Souvik Mahapatra 2016 | 286 Pages | ISBN: 8132225074 | PDF | 21 MB
Souvik Mahapatra, "Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling" English | 2016 | 286 Pages | ISBN: 8132225074 | EPUB | 6 MB
Souvik Mahapatra, "Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling" 2016 | ISBN-10: 8132225074 | 286 pages | EPUB | 6 MB