Semiconductor Surfaces And Interfaces

COMSOL, the leading provider of multiphysics modeling and simulation software, has released an updated COMSOL Multiphysics 5.3 software, is a general-purpose software platform, based on advanced numerical methods, for modeling and simulating physics-based problems.

COMSOL, the leading provider of multiphysics modeling and simulation software, has released an update to COMSOL Multiphysics 5.3 software, is a general-purpose software platform, based on advanced numerical methods, for modeling and simulating physics-based problems. All COMSOL software products undergo stability improvements that are introduced as updates.

This on-target guide takes readers step-by-step through the manipulation of materials in the nanoscale, fullerenes, carbon nanotubes, self-assembled nanolayers, gas-phase clusters, monolayer-protected metal nanoparticles, core-shell nanoparticles, and much more.

A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated.

The aim of this book is twofold: it is intended for use as a textbook for a ~ourse on electronic materials (indeed, it stems from a series of lectures on this topic delivered at Milan Polytechnic and at the universities of Modena and Parma), and as an up-to-date review for scientists working in the field ::>f silicon processing. Although a number of works on silicon are already available, the vast amount of existing and new data on silicon properties are nowhere adequately summarized in a single comprehensive report. The present volume is intended to fill this gap. Most of the examples dealt with are taken from the authors' every­ day experience, this choice being dictated merely by their greater knowl­ edge of these areas. Certain aspects of the physics of silicon have not been included; this is either because they have been treated in standard textbooks (e.g. the inhomogeneously doped semiconductor and the chem­ istry of isotropic or preferential aqueous etching of silicon), or because they are still in a rapidly evolving phase (e.g. silicon band-gap engineering, generation-recombination phenomena, cryogenic properties and the chem­ istry of plasma etching). In line with the standard practice in microelectronics, CGS units will be used for mechanical and thermal quantities, and SI units for electrical quan­ tities. All atomic energies will be given in electronvolts and the angstrom will be the unit of length used for atomic phenomena.