Transient Thermal

Basic to Advance Level Course with Strong Content Covered with Solved Problems of Engineering Domains

This book covers both theoretical and practical aspects of thermal contact conductance. The theoretical discussion focuses on heat transfer through spots, joints, and surfaces, as well as the role of interstitial materials (both planned and inadvertent). The practical discussion includes formulae and data that can be used in designing heat-transfer equipment for a variety of joints, including special geometries and configurations. The material included in this edition has been updated to reflect the latest advances in the field.

Analyze heat transfer in solids, fluids, heat exchangers, and cooling systems using thermal CFD and CHT in Ansys CFX

Learn simulation and analysis of various components using ANSYS Workbench

Finite elements analyisis using Ansys with real exercises

ElectroMagneticWorks, Inc. has released an updated (SP1.4) EMWorks EMS 2017. This is a major new release of the software that incorporates several new features at the meshing and pre-processing, solving and post-processing levels.

Master the skill of designing analog and power circuits using diodes!

This book presents physics-based electro-thermal models of bipolar power semiconductor devices including their packages, and describes their implementation in MATLAB and Simulink. It is a continuation of our first book Modeling of Bipolar Power Semiconductor Devices. The device electrical models are developed by subdividing the devices into different regions and the operations in each region, along with the interactions at the interfaces, are analyzed using the basic semiconductor physics equations that govern device behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as junction voltages and carrier distribution in different regions of the device, can be obtained using the models.